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AEM

2N6532

8A,100V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
4.5 V
Base-Emitter On Voltage (VBE(ON))
2.8 V
Case Type
TO-220
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCER)
100 V
Collector-Emitter Breakdown Voltage (BVCEV)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Collector-Emitter Voltage (VCER)
100 V
Collector-Emitter Voltage (VCEV)
100 V
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
100 — 5000 x10³
DC Current Gain (hFE)
1 — 10 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
Forward Voltage (VF)
2.8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
15 A
Power Dissipation
65 W
Second Breakdown Collector Current (Is/b)
2.7 A
Second Breakdown Energy (ES/b)
120 mJ
Small Signal Current Gain (hfe)
1000 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1.92 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued8A,100V Through-Hole Transistor-Bipolar Power (>1A) NPN DarlingtonSleeve50PBFREE

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