2N6543
400V,5A,57.2W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-3
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICER)
3000 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (BVCEX)
450 V
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
850 V
Collector-Emitter Voltage (VCEX)
450 V
Collector-Emitter Voltage (BVCEX)
300 V
Continuous Base Current
5 A
Continuous Collector Current
5 A
Continuous Emitter Current
10 A
Current Gain-Bandwidth Product (fT)
6 — 28 MHz
DC Current Gain (hFE)
7 — 35 x10³
DC Current Gain (hFE)
12 — 60 x10³
Delay Time (td)
50 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
8 V
Fall Time (tf)
800 ns
Fall Time Clamped Inductive Load (tf)
0.2 µs
Fall Time Clamped Inductive Load (tf)
0.8 µs
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
50 — 200 pF
Peak Base Current
10 A
Peak Collector Current
10 A
Peak Emitter Current
20 A
Power Dissipation
100 W
Power Dissipation
57.2 W
Rise Time (tr)
700 ns
Second Breakdown Collector Current (Is/b)
0.2 A
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4000 ns
Storage Time Clamped Inductive Load (ts)
0.8 µs
Storage Time Clamped Inductive Load (ts)
4 µs
Thermal Resistance Junction-Case
1.75 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 400V,5A,57.2W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP083.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |