2N6556
100V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
TO-202
Collector-Base Breakdown Voltage (BVCBO)
100 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
100 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
75 — 375 MHz
DC Current Gain (hFE)
80 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
18 pF
Peak Collector Current
2 A
Power Dissipation
10 W
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Thermal Resistance Junction-Case
12.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 100V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| 2N6551-6556.PDF | Device Datasheet |
| Material Composition:TO-202 | Material Composition |
| Package Detail Document:TO-202 | Package Detail Document |
| Product EOL Notice:All Product in the TO-202 and | Product EOL Notice |
| Product Reliability Data:TO-202 Package Reliability | Product Reliability Data |