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AEM

2N6578

15A,120V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
4.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
3.5 V
Case Type
TO-3
Collector-Base Cutoff Current (ICBO)
500000 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2800 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Base Current
250 mA
Continuous Collector Current
15 A
Continuous Emitter Current
15.25 A
Current Gain-Bandwidth Product (fT)
10 — 200 MHz
DC Current Gain (hFE)
2 — 20 x10³
DC Current Gain (hFE)
500 — 5000 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
200 x10³
Delay Time (td)
150 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
7500000 nA
Emitter-Base Voltage
7 V
Fall Time (tf)
7000 ns
Forward Voltage (VF)
4.5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current
500 mA
Peak Collector Current
30 A
Peak Emitter Current
30.5 A
Power Dissipation
120 W
Rise Time (tr)
1000 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
2000 ns
Thermal Resistance Junction-Case
1.46 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued15A,120V Through-Hole Transistor-Bipolar Power (>1A) NPN DarlingtonSleeve20PBFREE

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