2N657A
100V,250mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Specifications
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
100 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Collector Current
250 mA
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
30 — 90 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
60 pF
Input Impedance Common Emitter (hie)
0.5 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
13 pF
Power Dissipation
4 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 100V,250mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP059.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |