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AEM

2N6609

140V,16A,150W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
2.2 V
Case Type
TO-3
Collector-Base Cutoff Current (ICBO)
2000000 nA
Collector-Base Voltage
160 V
Collector-Emitter Breakdown Voltage (BVCER)
150 V
Collector-Emitter Breakdown Voltage (BVCEV)
160 V
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Cutoff Current (ICEO)
10000 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1400 mV
Collector-Emitter Voltage (VCEO)
140 V
Collector-Emitter Voltage (VCEV)
160 V
Continuous Base Current
4 A
Continuous Collector Current
16 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
15 — 60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current
15 A
Peak Collector Current
30 A
Power Dissipation
150 W
Second Breakdown Collector Current (Is/b)
1.5 A
Small Signal Current Gain (hfe)
40 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.17 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued140V,16A,150W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve20PBFREE

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