2N6673
400V,8A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Case Type
TO-3
Clamped Turn-off Switching Time (Inductive Load) (tc)
800 ns
Clamped Turn-off Switching Time (Inductive Load) (tc)
400 ns
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
650 V
Collector-Emitter Voltage Clamped (BVCEX)
450 V
Collector-Emitter Voltage Clamped (VCEX)
450 V
Collector-Emitter Voltage Clamped (BVCEX)
300 V
Continuous Base Current
4 A
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
15 — 60 MHz
DC Current Gain (hFE)
10 — 40 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
8 V
Fall Time (tf)
800 ns
Fall Time (tf)
400 ns
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
50 — 300 pF
Peak Collector Current
10 A
Power Dissipation
150 W
Rise Time (tr)
800 ns
Rise Time (tr)
500 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4000 ns
Storage Time (ts)
2500 ns
Thermal Resistance Junction-Case
1.17 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 400V,8A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP083.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N6545 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |