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AEM

2N6675

400V,15A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-3
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
650 V
Continuous Base Current
5 A
Continuous Collector Current
15 A
Current Gain-Bandwidth Product (fT)
15 — 50 MHz
DC Current Gain (hFE)
8 — 20 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
7 V
Fall Time (tf)
1000 ns
Fall Time (tf)
500 ns
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 — 500 pF
Peak Collector Current
20 A
Power Dissipation
175 W
Rise Time (tr)
1000 ns
Rise Time (tr)
600 ns
Second Breakdown Collector Current (Is/b)
0.25 A
Second Breakdown Collector Current (Is/b)
5.9 A
Small Signal Current Gain (hfe)
3 — 10 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4000 ns
Storage Time (ts)
2500 ns
Thermal Resistance Junction-Case
1 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued400V,15A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve20PBFREE

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