2N696
500mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCER)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCER)
40 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
20 — 60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
35 pF
Power Dissipation
2 W
Power Dissipation
600 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
292 °C/W
Thermal Resistance Junction-Case
87.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 500mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N696.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |