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AEM

2N697A

35V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
35 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 — 120 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Input Impedance Common Base (hib)
4 — 8 Ω
Input Impedance Common Base (hib)
24 — 34 Ω
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
35 pF
Power Dissipation
1 W
Power Dissipation
2 W
Power Dissipation
600 mW
Small Signal Current Gain (hfe)
35 — 150 x10³
Small Signal Current Gain (hfe)
30 — 100 x10³
Storage Temperature (Tstg)
-65 — 175 °C
Voltage Feedback Ratio Common Base (hrb)
0.3 x10⁻³
Voltage Feedback Ratio Common Base (hrb)
0.3 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active35V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP059.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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