Skip to main content
AEM

2N7002

115mA,60V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-23
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
115 mA
Continuous Drain Current
75 mA
Continuous Source Current (Body Diode)
115 mA
Device Family
MOSFETs/JFETs
Diode Forward On Voltage (VSD)
1.5 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source On Voltage (VDS(ON))
375 mV
Drain-Source On Voltage (VDS(ON))
3750 mV
Drain-Source Voltage
60 V
ECCN Code
EAR99
Forward Transconductance (gFS)
80 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V(2.1 V Typical)
Gate-Drain Charge (Qgd)
0.148 nC
Gate-Source Charge (Qgs)
0.196 nC
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
800 mA
Maximum Pulsed Source Current
800 mA
On State Drain Current (ID(ON))
500 mA
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Static Drain-Source On Resistance (rDS(ON))
7.5 Ω
Static Drain-Source On Resistance (rDS(ON))
13.5 Ω
Static Drain-Source On Resistance (rDS(ON))
7.5 Ω
Static Drain-Source On Resistance (rDS(ON))
13.5 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.592 nC
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeBox3,500TINNo
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000LEAD or TINNo
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel10,000TINNo

Resources

Recently Viewed