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AEM

2N7002

115mA,60V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-23
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
75 mA
Continuous Drain Current
115 mA
Continuous Source Current (Body Diode)
115 mA
Diode Forward On Voltage (VSD)
1.5 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source On Voltage (VDS(ON))
3750 mV
Drain-Source On Voltage (VDS(ON))
375 mV
Drain-Source Voltage
60 V
ECCN Code
EAR99
Forward Transconductance (gFS)
80 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V(2.1 V Typical)
Gate-Drain Charge (Qgd)
0.148 nC
Gate-Source Charge (Qgs)
0.196 nC
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
800 mA
Maximum Pulsed Source Current
800 mA
On State Drain Current (ID(ON))
500 mA
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
13.5 Ω
Static Drain-Source On Resistance (rDS(ON))
7.5 Ω
Static Drain-Source On Resistance (rDS(ON))
13.5 Ω
Static Drain-Source On Resistance (rDS(ON))
7.5 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.592 nC
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeBox3,500TINNo
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000LEAD or TINNo
Active115mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel10,000TINNo

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