2N706A
15V,50mA,300mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCER)
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Cutoff Current (ICER)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCER)
20 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
20 — 60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
1 W
Power Dissipation
300 mW
Storage Temperature (Tstg)
-65 — 175 °C
Storage Time (ts)
25 ns
Turn Off Time (toff)
75 ns
Turn On Time (ton)
40 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 15V,50mA,300mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch | Box | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N706A.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |