2N834A
200mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage
40 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
500 MHz
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
1.2 W
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
75 ns
Turn Off Time (toff)
75 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 200mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch | Box | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N834A.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Process Change Notice:CP207 replaced by CP396V | Process Change Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |