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AEM

2N914

15V,150mA,360W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.8 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
15000 nA
Collector-Base Cutoff Current (ICBO)
25 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCER)
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCER)
20 V
Continuous Collector Current
150 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
12 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
30 — 120 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
9 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
1.2 W
Power Dissipation
680 mW
Power Dissipation
360 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
40 ns
Turn On Time (ton)
40 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active15V,150mA,360W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP054.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Process Change Notice:CP207 replaced by CP396VProcess Change Notice
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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