2N915
50V Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
70 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
50 V
DC Current Gain (hFE)
50 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 50V Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | Box | 2,000 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP054.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product EOL Notice:2N915 | Product EOL Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |