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AEM

2N930

45V,30mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Cutoff Current (ICEO)
0.002 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
600 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
8 pF
Power Dissipation
1.2 W
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
350 °C/W
Thermal Resistance Junction-Case
146 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued45V,30mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N930.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product EOL Notice:CMPT930Product EOL Notice
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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