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2SC1815-Y

50V,150mA,400mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Cutoff Current (ICEO)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
150 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
120 — 240 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
55 — 125 °C
Power Dissipation
400 mW
Storage Temperature (Tstg)
55 — 125 °C
Thermal Resistance Junction-Ambient
250 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued50V,150mA,400mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo

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