40327
1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Emitter Breakdown Voltage (BVCER)
300 V
Collector-Emitter Cutoff Current (ICER)
5 µA
Collector-Emitter Voltage (VCER)
300 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
40 — 250 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP067.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |