40348
65V,1.5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.3 V
Case Type
TO-39
Collector-Base Voltage
90 V
Collector-Emitter Breakdown Voltage (BVCEV)
90 V
Collector-Emitter Breakdown Voltage (BVCEO)
65 V
Collector-Emitter Cutoff Current (ICER)
1 µA
Collector-Emitter Cutoff Current (ICER)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
65 V
Collector-Emitter Voltage (VCEV)
90 V
Continuous Base Current
500 mA
Continuous Collector Current
1.5 A
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
30 — 125 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
3 A
Power Dissipation
8.75 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 65V,1.5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP067.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |