BC108C
25V,200mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise
Specifications
Base-Emitter On Voltage (VBE(ON))
0.77 V
Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.05 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.83 V
Case Type
TO-18
Collector-Base Cutoff Current (ICBO)
4000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
420 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
4.5 pF
Power Dissipation
600 mW
Small Signal Current Gain (hfe)
500 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
175 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 25V,200mA,600mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| BC107.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |