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AEM

BC160-16

40V,1A,3.7W Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1.7 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
100 — 250 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
180 pF
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
30 pF
Peak Base Current
200 mA
Peak Collector Current
1.5 A
Power Dissipation
3.7 W
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
650 ns
Turn On Time (ton)
500 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,1A,3.7W Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP065.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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