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AEM

BC177B

45V,100mA,300mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 0.75 V(0.65 V Typical)
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.73 V
Case Type
TO-18
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
240 — 500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
6 pF
Peak Base Current
200 mA
Peak Collector Current
200 mA
Power Dissipation
300 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
583.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,100mA,300mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BC177_SERIES.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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