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BC182

50V,100mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
120 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
15 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
1 W
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active50V,100mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000LEAD or TINNo
Active50V,100mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active50V,100mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

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