BC300
80V,500mA,850mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Specifications
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEV)
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
40 — 240 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Impedance Common Emitter (hie)
1.7 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
14 µS
Output Capacitance (Cob)
10 pF
Peak Base Current
500 mA
Peak Collector Current
1 A
Power Dissipation
6 W
Power Dissipation
850 mW
Small Signal Current Gain (hfe)
140 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
25 °C/W
Voltage Feedback Ratio Common Emitter (hre)
1.7 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 80V,500mA,850mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP065.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |