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BC307B

45V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Case Type
TO-92
Collector-Emitter Breakdown Voltage (BVCES)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICES)
0.015 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Collector-Emitter Voltage (VCES)
50 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
130 MHz
DC Current Gain (hFE)
180 — 460 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
12 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
250 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active45V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,500LEAD or TINNo

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