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BC307B
45V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise
Specifications
Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Case Type
TO-92
Collector-Emitter Breakdown Voltage (BVCES)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICES)
0.015 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Collector-Emitter Voltage (VCES)
50 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
130 MHz
DC Current Gain (hFE)
180 — 460 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
12 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
250 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 45V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise | Box | 2,500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| BC307_308_309.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |