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AEM

BC394

180V,100mA,.4W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
180 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
180 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
400 mW
Power Dissipation
1.4 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
437.5 °C/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active180V,100mA,.4W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BC394.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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