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BC559C

30V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 0.75 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
4000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEV)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
650 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
30 V
Collector-Emitter Voltage (VCEV)
30 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
420 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
4.5 pF
Peak Base Current
200 mA
Peak Collector Current
200 mA
Peak Emitter Current
200 mA
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
250 °C/W
Thermal Resistance Junction-Case
150 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only30V,100mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,000PBFREE

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