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AEM

BC857CW

45V,100mA,250mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
0.82 V
Base-Emitter On Voltage (VBE(ON))
0.6 — 0.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 V
Case Type
SOT-323
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Capacitance (Ccb)
4.5 pF
Collector-Base Cutoff Current (ICBO)
4000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
650 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
420 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Peak Base Current
200 mA
Peak Collector Current
200 mA
Power Dissipation
250 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
500 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,100mA,250mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox5,000PBFREE

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