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AEM

BCV47

500mA,60V Surface mount Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
100 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
220 MHz
DC Current Gain (hFE)
4 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
2 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
800 mA
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active500mA,60V Surface mount Transistor-Small Signal (<=1A) NPN DarlingtonBox3,500PBFREE

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