Skip to main content
AEM

BCV72

60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
200 — 450 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
2.5 pF
Peak Collector Current
200 mA
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseBox3,500PBFREE
Discontinued60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel3,000PBFREE

Resources

Recently Viewed