Skip to main content
AEM

BCW61D

32V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 0.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.68 — 1.05 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.85 V
Case Type
SOT-23
Collector-Base Voltage
32 V
Collector-Emitter Breakdown Voltage (BVCEO)
32 V
Collector-Emitter Cutoff Current (ICES)
0.02 µA
Collector-Emitter Cutoff Current (ICES)
20 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
550 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
32 V
Continuous Collector Current
100 mA
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
380 — 630 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
350 — 700 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Turn Off Time (toff)
800 ns
Turn On Time (ton)
150 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active32V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseBox3,500PBFREE
Special Order Item32V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel3,000PBFREE

Resources

Recently Viewed