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AEM

BCW89

60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 0.75 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCES)
60 V
Continuous Collector Current
100 mA
DC Current Gain (hFE)
120 — 260 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseBox3,500PBFREE
Special Order Item60V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel3,000PBFREE

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