BCX22
125V,800mA,450mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-18
Collector-Emitter Breakdown Voltage (BVCES)
125 V
Collector-Emitter Breakdown Voltage (BVCEO)
125 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
125 V
Collector-Emitter Voltage (VCES)
125 V
Continuous Base Current
100 mA
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
63 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
12 pF
Peak Collector Current
1 A
Power Dissipation
1.55 W
Power Dissipation
450 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 125V,800mA,450mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP058.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product EOL Notice:BCX22 | Product EOL Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |