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BCX38A

800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1250 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
800 mA
DC Current Gain (hFE)
1000 x10³
DC Current Gain (hFE)
500 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
2 A
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonBox2,500LEAD or TINNo
Active800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonAmmo2,000LEAD or TINNo
Active800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonAmmo2,000LEAD or TINNo
Active800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel2,000LEAD or TINNo
Active800mA,60V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel2,000LEAD or TINNo

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