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AEM

BCX70J

45V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.55 — 0.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 1.05 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.85 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
100 — 550 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
50 — 350 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
250 — 460 x10³
DC Current Gain (hFE)
90 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
11 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
1.7 pF
Peak Base Current
200 mA
Peak Collector Current
200 mA
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Special Order Item45V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseBox3,500PBFREE
Active45V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel3,000PBFREE

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