BCY70
45V,200mA,350mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.9 V
Case Type
TO-18
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
45 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
500 °C/W
Thermal Resistance Junction-Case
150 °C/W
Turn Off Time (toff)
500 ns
Turn On Time (ton)
65 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 45V,200mA,350mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP058.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |