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AEM

BD138-16

60V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
500 mA
Continuous Collector Current
1.5 A
Current Gain-Bandwidth Product (fT)
160 MHz
DC Current Gain (hFE)
100 — 250 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Peak Base Current
1 A
Peak Collector Current
2 A
Power Dissipation
1.25 W
Power Dissipation
8 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
100 °C/W
Thermal Resistance Junction-Case
10 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued60V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE
Discontinued60V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

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