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AEM

BD441

80V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCES)
80 V
Continuous Base Current
1 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
7 A
Power Dissipation
36 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
100 °C/W
Thermal Resistance Junction-Case
3.5 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued80V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchSleeve50PBFREE

Resources

ItemType
Analytical Test Report:Copper Bonding WireAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
BD439-442.PDFDevice Datasheet
Material Composition:TO-126Material Composition
Package Detail Document:TO-126Package Detail Document
Process Change Notice:2N5192 chip size changeProcess Change Notice
Product EOL Notice:Power transistors bare die andProduct EOL Notice
Product Reliability Data:TO-126 Package ReliabilityProduct Reliability Data

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