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AEM

BF178

50mA,1.7W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
185 V
Collector-Emitter Breakdown Voltage (BVCER)
185 V
Collector-Emitter Breakdown Voltage (BVCEO)
115 V
Collector-Emitter Cutoff Current (ICES)
1000 µA
Collector-Emitter Voltage (VCER)
185 V
Continuous Base Current
10 mA
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
1.7 W
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active50mA,1.7W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BF178.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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