BF258
250V,100mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
90 MHz
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
200 mA
Power Dissipation
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
30 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 250V,100mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP065.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |