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AEM

BF459

300V,100mA,1.2W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Case Type
TO-126
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Base Current
50 mA
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
90 MHz
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
5.5 pF
Peak Base Current
100 mA
Peak Collector Current
300 mA
Power Dissipation
10 W
Power Dissipation
1.2 W
Reverse Capacitance (Cre)
4.2 pF
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Thermal Resistance Junction-Case
10 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued300V,100mA,1.2W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageSleeve50PBFREE
Discontinued300V,100mA,1.2W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageSleeve50PBFREE

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