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AEM

BFT28C

250V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCER)
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
250 V
Collector-Emitter Voltage (VCER)
300 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
25 MHz
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.29.0055
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
5 W
Power Dissipation
1 W
Second Breakdown Collector Current (Is/b)
0.0625 A
Small Signal Current Gain (hfe)
26 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active250V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BFT28ABC.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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