BFW16A
25V,150mA,1.5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Specifications
Amplifier Power Gain (Gpe)
6.5 dB
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCER)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Collector-Emitter Voltage (VCER)
40 V
Continuous Collector Current
150 mA
Current Gain-Bandwidth Product (fT)
1200 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2 V
Emitter-Base Voltage
2 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
4 pF
Peak Collector Current
300 mA
Power Dissipation
1.5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
250 °C/W
Thermal Resistance Junction-Case
50 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 25V,150mA,1.5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP065.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product EOL Notice:RF TRANSISTOR DIE | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |