BFX34
60V,5A,870mW Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
40 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
500 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
100 pF
Power Dissipation
5 W
Power Dissipation
870 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
1200 ns
Turn On Time (ton)
600 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 60V,5A,870mW Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| BFX34.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Process Change Notice:CP322 REPLACES CP312 | Process Change Notice |
| Product EOL Notice:BFX34 | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |