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AEM

BFX89

15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Amplifier Power Gain (Gpe)
7 dB
Amplifier Power Gain (Gpe)
22 dB
Case Type
TO-72
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCER)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCER)
30 V
Continuous Collector Current
25 mA
Current Gain-Bandwidth Product (fT)
1200 MHz
Current Gain-Bandwidth Product (fT)
1000 MHz
DC Current Gain (hFE)
20 — 125 x10³
DC Current Gain (hFE)
20 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage
2.5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6.5 dB
Noise Figure (NF)
7 dB
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
1.7 pF
Peak Collector Current
50 mA
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
6 mW
Reverse Capacitance (Cre)
0.6 pF
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
875 °C/W
Thermal Resistance Junction-Case
583 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Aluminum WireAnalytical Test Report
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:Epoxy AdhesiveAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BFX89-BFY90.PDFDevice Datasheet
Material Composition:TO-72Material Composition
Package Detail Document:TO-72Package Detail Document
Process Change Notice:HEADER TO-72Process Change Notice
Process Change Notice:TO-72 CaseProcess Change Notice
Process Change Notice:TO-72 CASEProcess Change Notice
Product Reliability Data:TO-72 Package ReliabilityProduct Reliability Data

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