BFY50
35V,1A,.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
2500 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
35 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
1.5 A
Power Dissipation
5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
218 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 35V,1A,.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP066.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |