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AEM

BFY90

15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Amplifier Power Gain (Gpe)
8 dB
Amplifier Power Gain (Gpe)
21 dB
Case Type
TO-72
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCER)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCER)
30 V
Continuous Collector Current
25 mA
Current Gain-Bandwidth Product (fT)
1300 MHz
Current Gain-Bandwidth Product (fT)
1000 MHz
DC Current Gain (hFE)
20 — 125 x10³
DC Current Gain (hFE)
25 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage
2.5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
5 dB
Noise Figure (NF)
5.5 dB
Noise Figure (NF)
4 dB
Noise Figure (NF)
3.5 dB
Output Capacitance (Cob)
1.5 pF
Peak Collector Current
50 mA
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
10 mW
Reverse Capacitance (Cre)
0.8 pF
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
875 °C/W
Thermal Resistance Junction-Case
583 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,000LEAD or TINNo

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