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AEM

BSS52

1A Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.4 — 1.75 V
Base-Emitter On Voltage (VBE(ON))
1.3 — 1.65 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
90 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Voltage (VCER)
80 V
Continuous Collector Current
1 A
DC Current Gain (hFE)
2000 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current
100 mA
Peak Collector Current
2 A
Power Dissipation
5 W
Power Dissipation
800 mW
Small Signal Current Gain (hfe)
10 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
219 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
1500 ns
Turn Off Time (toff)
1500 ns
Turn On Time (ton)
400 ns
Turn On Time (ton)
400 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued1A Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BSS50-52.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product EOL Notice:CP101 wafer processProduct EOL Notice
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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