Skip to main content
AEM

BSV16-10

60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
0.7 — 1.4 V
Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-39
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Cutoff Current (ICES)
50 µA
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCES)
60 V
Continuous Base Current
200 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
63 — 160 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
150 ns
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
30 pF
Power Dissipation
5 W
Power Dissipation
800 mW
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
500 ns
Thermal Resistance Junction-Ambient
220 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn On Time (ton)
500 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BSV15.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

Recently Viewed